Part Number | SI4666DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 25V 16.5A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1145pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Si4666DY-T1-GE3
Vishay Thin Film
8128
0.27
Hongkong Shengshi Electronics Limited
SI4666DY-T1-GE3
VISH
2498
1.36
Shenzhen Mannyshield Technology Co., Ltd.
SI4666DY-T1-GE3
Vishay / BC Components
6946
2.45
Nosin (HK) Electronics Co.
SI4666DY-T1-GE3
VISHAY GENERAL
3084
3.54
Far East Electronics Technology Limited
SI4666DY-T1-GE3
Vishay Siliconix
463
4.63
Passive Components Sourcing. Limited