(5/5) based on 19 customer reviews
Description
MOSFET N/P-CH 40V 8A 8-SOIC Series: TrenchFET? FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25～C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) @ Vds: 2390pF @ 20V Power - Max: 3.25W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4563DY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 40V 8A 8-SOIC |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 20V |
| Power - Max | 3.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
SI4563DY-T1-GE3
Vishay Thin Film
12000
0.8
Bonase Electronics (HK) Co., Limited
SI4563DY-T1-GE3
VISH
8000
1.625
MY Group (Asia) Limited
SI4563DY-T1-GE3
Vishay / BC Components
67248
2.45
AIC Semiconductor Co., Limited
SI4563DY-T1-GE3
VISHAY GENERAL
21763
3.275
HL Electronics (Hong Kong) Co.,Ltd
SI4563DY-T1-E3
Vishay Siliconix
23500
4.1
Bonase Electronics (HK) Co., Limited
