Description
MOSFET N/P-CH 20V 6.6A 8-SOIC Series: TrenchFET? FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1.3W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
Part Number | SI4500BDY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET N/P-CH 20V 6.6A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N and P-Channel, Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.6A, 3.8A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 9.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
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