Part Number | SI4477DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 26.6A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 26.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 6.6W (Tc) |
Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 18A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
SI4477DY-T1-GE3
VISHAY GENERAL
7916
6.2025
Shenzhen Xingweiming Technology Co., Ltd
SI4477DY-T1-GE3
Vishay Siliconix
6540
7.68
Corechips Co., Limited
Si4477DY-T1-GE3
Vishay Thin Film
7497
1.77
Hongkong Shengshi Electronics Limited
SI4477DY-T1-GE3
VISH
3622
3.2475
SUNTOP SEMICONDUCTOR CO., LIMITED
SI4477DYT1GE3
Vishay / BC Components
312
4.725
N&S Electronic Co., Limited