Part Number | SI4463CDY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CHAN 2.5V SO8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta), 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 162nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4250pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4463CDY-T1-GE3
Vishay Thin Film
100
1.23
KYO Inc.
SI4463CDY-T1-GE3
VISH
21777
1.905
Gallop Great Holdings (Hong Kong) Limited
SI4463CDY-T1-GE3
Vishay / BC Components
850000
2.58
Far East Electronics Technology Limited
SI4463CDYT1GE3
VISHAY GENERAL
2540
3.255
FLOWER GROUP(HK)CO.,LTD
SI4463CDY-T1-GE3
Vishay Siliconix
286038
3.93
Cicotex Electronics (HK) Limited