Part Number | SI4386DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 11A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.47W (Ta) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4386DY-T1-GE3
Vishay Thin Film
401778
0.08
IC Chip Co., Ltd.
SI4386DY-T1-GE3
VISH
3180
1.165
HK HEQING ELECTRONICS LIMITED
SI4386DY-T1-GE3
Vishay / BC Components
1813
2.25
Bonase Electronics (HK) Co., Limited
SI4386DY-T1-GE3
VISHAY GENERAL
265146
3.335
Cicotex Electronics (HK) Limited
SI4386DY-T1-GE3
Vishay Siliconix
80999
4.42
CIS Ltd (CHECK IC SOLUTION LIMITED)