Part Number | SI4178DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 12A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 15V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 8.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4178DY-T1-GE3
Vishay Thin Film
720
1.43
Pacific Corporation
SI4178DY-T1-GE3
VISH
8324
2.0175
HXY Electronics (HK) Co.,Limited
SI4178DY-T1-GE3
Vishay / BC Components
8963
2.605
Shenzhen WTX Capacitor Co., Ltd.
SI4178DY-T1-GE3
VISHAY GENERAL
7862
3.1925
Xinye International Technology Limited
SI4178DY-T1-GE3
Vishay Siliconix
3145
3.78
WIN AND WIN ELECTRONICS LIMITED