Part Number | SI4162DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 19.3A 8-SOIC |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 19.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1155pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
Rds On (Max) @ Id, Vgs | 7.9 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4162DY-T1-GE3
Vishay Thin Film
2500
1.29
Gallop Great Holdings (Hong Kong) Limited
SI4162DY-T1-GE3
VISH
35200
2.245
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI4162DY-T1-GE3
Vishay / BC Components
850000
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Far East Electronics Technology Limited
Si4162DY-T1-GE3
VISHAY GENERAL
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Yingxinyuan INT'L (Group) Limited
SI4162DY-T1-GE3
Vishay Siliconix
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5.11
TERNARY UNION CO., LIMITED