Part Number | SI4158DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 36.5A 8-SOIC |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 36.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 132nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5710pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 6W (Tc) |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4158DY-T1-GE3
Vishay Thin Film
3999
1.12
HK HEQING ELECTRONICS LIMITED
SI4158DY-T1-GE3
VISH
850000
2.3025
Far East Electronics Technology Limited
SI4158DY-T1-GE3
Vishay / BC Components
21546
3.485
Gallop Great Holdings (Hong Kong) Limited
SI4158DY-T1-GE3
VISHAY GENERAL
29142
4.6675
N&S Electronic Co., Limited
SI4158DY-T1-GE3
Vishay Siliconix
39965
5.85
N&S Electronic Co., Limited