Part Number | SI4108DY-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 75V 20.5A 8-SOIC |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 20.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 38V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 7.8W (Tc) |
Rds On (Max) @ Id, Vgs | 9.8 mOhm @ 13.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
SI4108DY-T1-GE3
Vishay Thin Film
1210
0.36
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI4108DY-T1-GE3
VISH
6000
1.6075
Yingxinyuan INT'L (Group) Limited
SI4108DY-T1-GE3
Vishay / BC Components
33
2.855
Splendent Technologies Pte Ltd
SI4108DY-T1-GE3
VISHAY GENERAL
850000
4.1025
Far East Electronics Technology Limited
SI4108DY-T1-GE3
Vishay Siliconix
79999
5.35
Ande Electronics Co., Limited