(4/5) based on 13 customer reviews
Description
MOSFET N/P-CH 20V 3.9A 6TSOP Series: TrenchFET? FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 3.9A, 2.1A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) @ Vds: 150pF @ 10V Power - Max: 1.4W, 1.3W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP
| Part Number | SI3585CDV-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Vishay |
| Description | MOSFET N/P-CH 20V 3.9A 6TSOP |
| Series | TrenchFET |
| Packaging | |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A, 2.1A |
| Rds On (Max) @ Id, Vgs | 58 mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Power - Max | 1.4W, 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Image |  |
Hot Offer
SI3585CDV-T1-GE3
Vishay Siliconix
15000
4.82
HONGKONG TIANYOU TECHNOLOGY LIMITED
Si3585CDV-T1-GE3
Vishay Thin Film
5000000
0.96
Hongkong Shengshi Electronics Limited
SI3585CDV-T1-GE3
VISH
180
1.925
SUNTOP SEMICONDUCTOR CO., LIMITED
SI3585CDV-T1-GE3
Vishay / BC Components
46647
2.89
N&S Electronic Co., Limited
SI3585CDV-T1-GE3
VISHAY GENERAL
14729
3.855
N&S Electronic Co., Limited
