Part Number | SI3483DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 30V 4.7A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.14W (Ta) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 6.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3483DV-T1-E3
Vishay Thin Film
1740
0.74
HK HEQING ELECTRONICS LIMITED
SI3483DV-T1-E3
VISH
55100
1.9075
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI3483DV-T1-E3
Vishay / BC Components
280
3.075
Gallop Great Holdings (Hong Kong) Limited
SI3483DV-T1-E3
VISHAY GENERAL
409830
4.2425
Cicotex Electronics (HK) Limited
SI3483DV-T1-E3
Vishay Siliconix
4868000
5.41
Shenzhen WTX Capacitor Co., Ltd.