Part Number | SI3481DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 30V 4A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.14W (Ta) |
Rds On (Max) @ Id, Vgs | 48 mOhm @ 5.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3481DV-T1-E3
Vishay Thin Film
602667
0.42
IC Chip Co., Ltd.
SI3481DV-T1-E3
VISH
527
1.0575
Gallop Great Holdings (Hong Kong) Limited
SI3481DV-T1-E3
Vishay / BC Components
191000
1.695
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI3481DV-T1-E3
VISHAY GENERAL
263447
2.3325
Cicotex Electronics (HK) Limited
SI3481DV-T1-E3
Vishay Siliconix
12500
2.97
Yingxinyuan INT'L (Group) Limited