Part Number | SI3475DV-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 200V 0.95A 6-TSOP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
Rds On (Max) @ Id, Vgs | 1.61 Ohm @ 900mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3475DV-T1-E3
Vishay Thin Film
1000
1.25
MY Group (Asia) Limited
Si3475DV-T1-E3
VISH
19087
2.425
AIC Semiconductor Co., Limited
Si3475DV-T1-E3
Vishay / BC Components
5000
3.6
Gallop Great Holdings (Hong Kong) Limited
Si3475DV-T1-E3
VISHAY GENERAL
516571
4.775
TERNARY UNION CO., LIMITED
SI3475DV-T1-E3
Vishay Siliconix
83000
5.95
Yingxinyuan INT'L (Group) Limited