Part Number | SI2335DS-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 12V 3.2A SOT23 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1225pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 51 mOhm @ 4A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2335DS-T1-E3
Vishay Thin Film
38653
1.72
HK HEQING ELECTRONICS LIMITED
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3000
2.9525
Gallop Great Holdings (Hong Kong) Limited
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Vishay / BC Components
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ATLANTIC TECHNOLOGY LIMITED
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Yingxinyuan INT'L (Group) Limited
SI2335DS-T1-E3
Vishay Siliconix
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Cicotex Electronics (HK) Limited