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Description
Si2329DS -GE3_RC. Vishay Siliconix. DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. SPICE Device Model Si2329DS . Vishay Siliconix. DESCRIPTION. The attached SPICE model describes the typical electrical characteristics of the p-channel SPICE Device Model Si2329DS www.vishay.com. Vishay Siliconix. S14-1409- Rev. B, 14-Jul-14. 1. Document Number: 63225. For technical questions, contact: 0.046. 0.06. 0.09. Available. Si8802DB. MICRO FOOT 0.8 x 0.8. 8. 5. 0.054. 0.06. 0.068. 0.086. 0.135. Available. SINGLE P-CHANNEL. Si2329DS . SOT-23. 8. 5. Nov 15, 2013 MOSFET, P-CH, -8V, -5.3A, SOT-23. Y. Vishay-Semiconductor. Si2329DS . 1. 1. Newark. 63W4143. None. 32. Q2. MOSFET, N-CH, 60V, 0.17A,
| Part Number | SI2329DS |
| Brand | Vishay |
| Image |  |
Si2329DS
Vishay Thin Film
360000
1.56
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
SI2329DS
VISH
72320
2.1325
IC Chip Co., Ltd.
Si2329DS
Vishay / BC Components
5000000
2.705
Hongkong Shengshi Electronics Limited
SI2329DS
VISHAY GENERAL
7451
3.2775
ATLANTIC TECHNOLOGY LIMITED
SI2329DS
Vishay Siliconix
29000
3.85
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
