Part Number | SI2327DS-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 200V 0.38A SOT-23 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Rds On (Max) @ Id, Vgs | 2.35 Ohm @ 500mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
Si2327DS-T1-GE3
Vishay Thin Film
18320
0.68
HK HEQING ELECTRONICS LIMITED
Si2327DS-T1-GE3
VISH
5000000
1.445
Hongkong Shengshi Electronics Limited
SI2327DS-T1-GE3
Vishay / BC Components
3000
2.21
Gallop Great Holdings (Hong Kong) Limited
SI2327DS-T1-GE3
VISHAY GENERAL
35800
2.975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI2327DS-T1-GE3
Vishay Siliconix
2045
3.74
WIN AND WIN ELECTRONICS LIMITED