Part Number | SI2324DST1GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 2.3A SOT-23 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 2.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
Rds On (Max) @ Id, Vgs | 234 mOhm @ 1.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
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