Rated 
(5/5) based on 19 customer reviews
(5/5) based on 19 customer reviews
| Part Number | SI 2309CDS-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET P-CH 60V 1.6A SOT23-3 |
| Series | TrenchFET |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 345 mOhm @ 1.25A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Lowest Price: $0.15
Highest Price: $4.7
1 - 5 of 5 Record(s)
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SI2309CDS-T1-GE3
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SI2309CDS-T1-GE3
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Hong Kong Fu Jing Semiconductor Co., Limited
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Part Number:
SI2309CDS-T1-GE3
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Vishay Siliconix
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