Part Number | SI1410EDHT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 20V 2.9A SC70-6 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 3.7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-6 (SOT-363) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Image |
SI1410EDH-T1-E3
Vishay Thin Film
4243
1.74
HK HEQING ELECTRONICS LIMITED
SI1410EDH-T1-E3
VISH
5492
2.8475
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1410EDHT1E3
Vishay / BC Components
4153
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Pacific Corporation
SI1410EDH-T1-E3
VISHAY GENERAL
2800
5.0625
NEW IDEAS INDUSTRIAL CO., LIMITED
SI1410EDH-T1-E3
Vishay Siliconix
7503
6.17
Cicotex Electronics (HK) Limited