Part Number | SI1304BDL-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 30V 0.9A SOT323-3 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 340mW (Ta), 370mW (Tc) |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 900mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-70-3 |
Package / Case | SC-70, SOT-323 |
Image |
SI1304BDL-T1-E3
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