Part Number | SI1065X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 12V 1.18A SC89-6 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 236mW (Ta) |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 1.18A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-6 |
Package / Case | SOT-563, SOT-666 |
Image |
SI1065X-T1-GE3
Vishay Thin Film
200
0.95
IC WELL ELECTRONICS (HK) CO., LIMITED
SI1065X-T1-GE3
VISH
132
1.7475
Sun Kai Wah ( H.K. ) Electronics Co.
SI1065X-T1-GE3
Vishay / BC Components
9951
2.545
ATLANTIC TECHNOLOGY LIMITED
SI1065X-T1-GE3
VISHAY GENERAL
3000
3.3425
Yingxinyuan INT'L (Group) Limited
SI1065X-T1-GE3
Vishay Siliconix
1000
4.14
MY Group (Asia) Limited