Part Number | SI1011X-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 12V SC-89 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 62pF @ 6V |
Vgs (Max) | ±5V |
FET Feature | - |
Power Dissipation (Max) | 190mW (Ta) |
Rds On (Max) @ Id, Vgs | 640 mOhm @ 400mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-3 |
Package / Case | SC-89, SOT-490 |
Image |
SI1011X-T1-GE3
Vishay Thin Film
8351
0.33
TERNARY UNION CO., LIMITED
SI1011X-T1-GE3
VISH
9720
1.055
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI1011X-T1-GE3
Vishay / BC Components
1216
1.78
Yingxinyuan INT'L (Group) Limited
SI1011X-T1-GE3
VISHAY GENERAL
2172
2.505
Ande Electronics Co., Limited
SI1011X-T1-GE3
Vishay Siliconix
7993
3.23
HK TWO L ELECTRONIC LIMITED