Part Number | IRLI640G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 200V 9.9A TO220FP |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 9.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.9A, 5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
IRLI640G
Vishay Thin Film
8486
1.24
SUNTOP SEMICONDUCTOR CO., LIMITED
IRLI640G
VISH
3438
2.49
HK HEQING ELECTRONICS LIMITED
IRLI640G
Vishay / BC Components
7996
3.74
Cicotex Electronics (HK) Limited
IRLI640G
VISHAY GENERAL
8133
4.99
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRLI640G
Vishay Siliconix
320
6.24
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED