Description
Apr 24, 2014 l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits. D2Pak. IRFS3206PbF . TO-220AB. Apr 7, 2008 D. IRFB3206PbF. IRFS3206PbF . IRFSL3206PbF. G. D. S. Gate. Drain. Source. VDSS. 60V. RDS(on) typ. 2.4m: max. 3.0m: ID (Silicon Limited). C14. 0.1uF. C21 12p. C8. 470pF. VIOUT. VCOUT. R10. 10K. RIN5. 47. C9. 0.1uF. NTC1. 10K. CIN6. 1uF. THERM. Q11. IRFS3206PBF . RIN4. 47. C18 0.1uF/50V. 160. T0-220. IRF3805S-7PPBF. 55. 2.6. 240. 130. D2PAK-7. IRFB3206PBF. 60. 3.0. 210. 120. T0-220. IRFS3206PBF . 60. 3.0. 210. 120. D2PAK. IRFP3206PBF. 5 giu 2013 IRFS3206PbF . R9. 1K2. R14. 22R. D1. OPT. S. C3. 100nF. R10. 10K. R11. 4K7 1 %. PC3. 1. R2. 10K. R7 12K 1%. U1. NCV8501DA. VIN. 1.
Part Number | IRFS3206PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 60V 120A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6540pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS3206PBF
Vishay Thin Film
33800
1.27
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS3206PBF
VISH
3090
2.215
Belt (HK) Electronics Co
IRFS3206PBF
Vishay / BC Components
10000
3.16
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IRFS3206PBF
VISHAY GENERAL
4000
4.105
Acort Co., Limited
IRFS3206PBF
Vishay Siliconix
100
5.05
Redstar Electronic Limited