Description
Notes through are on page 11 www.irf.com. 1. 4/26/00. IRFB23N20D. IRFS23N20D . IRFSL23N20D. SMPS MOSFET. HEXFET Power MOSFET. VDSS. Jul 20, 2004 IRFS23N20D . TO-220AB. IRFB23N20D. TO-262. IRFSL23N20D. Parameter. Max . Units. ID @ TC = 25 C. Continuous Drain Current, VGS @
Part Number | IRFS23N20D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 200V 24A D2PAK |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFS23N20D
Vishay Thin Film
55200
1.3
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRFS23N20D
VISH
1000
2.54
MY Group (Asia) Limited
IRFS23N20D
Vishay / BC Components
100
3.78
Xinnlinx Electronics Pte Ltd
IRFS23N20D
VISHAY GENERAL
45500
5.02
Analog Technology Limited
IRFS23N20D
Vishay Siliconix
50000
6.26
C & I Semiconductors Co., Limited