(5/5) based on 19 customer reviews
Description
IRFPF40 . SiHFPF40. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Page 2. Page 3. Page 4. Page 5. . / . 0 0 0 0 0. 5 4 3 2 1 . 50 75 100 125 150. 25. , ( ). . 1. 0. Page 1. Document Number: 90494 www.vishay.com. Revision: 07-Jul-10. 1. R-C Thermal Model Parameters. IRFPF40_RC, SiHFPF40_RC. Page 1. HEXFET Power MOSFET. 10/08/04. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V. 18. ID @ TC = 100 C. Page 1. Document Number: 91210 www.vishay.com. S11-0445-Rev. B, 21-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT
| Part Number | IRFPF40 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 900V 4.7A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
IRFPF40
Vishay Thin Film
220360
1.83
Cinty Int'l (HK) Industry Co., Limited
IRFPF40
VISH
50000
2.485
Redstar Electronic Limited
IRFPF40
Vishay / BC Components
150
3.14
Yingxinyuan INT'L (Group) Limited
IRFPF40
VISHAY GENERAL
21090
3.795
N&S Electronic Co., Limited
IRFPF40
Vishay Siliconix
24888
4.45
N&S Electronic Co., Limited
