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Description
IRFPC50 . SiHFPC50. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Document Number: 90492 www.vishay.com. Revision: 07-Jul-10. 1. R-C Thermal Model Parameters. IRFPC50_RC, SiHFPC50_RC. Vishay Siliconix. Page 1. Document Number: 91241 www.vishay.com. S11-0443-Rev. B, 14-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT Frequency ( IRFPC50 ). RGATE = 10 , VCC = 15V. Frequency (Hz). Figure 31. IR2111 TJ vs. Frequency (IRFBC20). RGATE = 33 , VCC = 15V. Frequency (Hz). Electrically Equivalent to IRFPC50 . MAXIMUM RATINGS. ALL RATINGS ARE AT T. C. = 25 C UNLESS OTHERWISE SPECIFIED. RATING. SYMBOL MIN. TYP.
| Part Number | IRFPC50 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 600V 11A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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