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Description
IRFP9240 . SiHFP9240. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. Page 1. Page 2. Page 3. Page 4. Page 5. Page 6. |RFP9240. Vary to to obtain VDs required lAs. Fig 12a. Unclamped inductive Test Circuit. As . \ |. N. Page 1. Document Number: 90137 www.vishay.com. Revision: 22-Jun-10. 1. R-C Thermal Model Parameters. IRFP9240_RC, SiHFP9240_RC. Vishay Siliconix. output stage will be used for the 2SK1530/2SJ201 pair. The IRFP240/ IRFP9240 would need thermal tracking if properly biased since the intersection point on Page 1. International. @ Rectifier. HEXFET Power MOSFET. 0 Dynamic dv/dt. Repetitive Avalanche Rated. Isolated Central Mounting Hole. Ease of
| Part Number | IRFP9240 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET P-CH 200V 12A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 7.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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