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Description
IRF P450 . @. Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Test Conditions. V(BR)DSS Drain toSource IRFP450 . N-CHANNEL 500V-0.33 - 14A TO-247. PowerMESHTM MOSFET www.artschip.com. 1. TYPE. VDSS. RDS(on). ID. IRFP450 . 500V. <0.4 . 14A. Jun 16, 2008 14. A. TC = 100 C. 8.7. Pulsed Drain Currenta. IDM. 56. Linear Derating Factor. 1.5. W/ C. Single Pulse Avalanche Energyb. EAS. 760. mJ. voltage and Miller plateau voltage, approximate internal gate resistance, and dv/ dt limits of an IRFP450 . MOSFET will be calculated. A representative diagram of Jun 22, 2010 DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical
| Part Number | IRFP450 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 14A TO-247AD |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 8.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-3P-3 Full Pack |
| Image |  |
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