(5/5) based on 17 customer reviews
Description
IRFP448 , SiHFP448. Vishay Siliconix. FEATURES. Dynamic dV/dt Rating. Repetitive Avalanche Rated. Isolated Central Mounting Hole. Fast Switching. Jun 22, 2010 DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical Low side drains inductor current. 2. During dead time body diode of low side conducts and keep inductor current flow. 3. At the moment high side is turned ON The power MOSFET outputs of these devices are similar to the International Rectifier type IRFP448 . These devices feature an excellent combination of fast IRFP448 . 500. 600. 11. 6.6. 56. 33.3. 0.7. 180. IRFP448PBF. 500. 600. 11. 6.6. 56 . 33.3. 0.7. 180. IRFP440. 500. 850. 8.8. 5.6. 42. 20. 0.83. 150. IRFP440PBF.
| Part Number | IRFP448 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 11A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 6.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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