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Description
SiHFP27N60K-E3. SnPb. IRFP27N60K . SiHFP27N60K. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. IRFP27N60K . 09/27/05 www.irf.com. 1. PD - 94407B. SMPS MOSFET. HEXFET Power MOSFET. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain IRFP27N60K power switch. Figure 21 - IR1150S Gate Drive voltage. Figure 22 - IR1150S Gate Drive voltage. The rise time must be carefully controlled by virtue. Page 1. IR2103(S)PBF. 1 www.irf.com 2013 International Rectifier. April 18, 2013. Half-Bridge Driver. Features. . Floating channel designed for bootstrap Jul 6, 2005 requirements e.g. the larger IRAC1150-300W Demo Board employs an. IRFP27N60K power switch. The turn-on resistance is 8.9 and the
| Part Number | IRFP27N60K |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 600V 27A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4660pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 16A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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