(4/5) based on 19 customer reviews
Description
Mar 21, 2011 IRFP22N60K , SiHFP22N60K. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Feb 18, 2011 470k/2w. R8. 499K. R9. 499K. R7. 150/2W. L3. 500uHY. + C7. 22uf/25v. + C10. 330uf/450v. Q4. IRFP22N60K . Q3. IRFP22N60K . D2. 1N4148. Apr 19, 2010 10R NTC Thermistor. 1. 2. Cp1. 220NF/275V. 2. 1. Rp10. 0R1 3W. F1. FUSE. 1. 2 . Ds5. Ls4148. L. G. N. D. 3. 1. 2. Q1. IRFP22N60K . 1. 2. Dp1. IRFP22N60K . Power MOSFET. 600 V, 280 mohm. TH / Radial. TO-247. IRFPE50. Power MOSFET. 800 V, 1.2 ohm. TH / Radial. TO-247. Rectifier. Product Name.
| Part Number | IRFP22N60K |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 600V 22A TO-247AC |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3570pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 13A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image |  |
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