Description
IRFP150N . HEXFET Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low IRFP150N . HEXFET Power MOSFET www.artschip.com. 1. FEATURES. Avalanche Process Technology. Dynamic dv/dt Rating. 175 Operating Document Number: 91203 www.vishay.com. S11-0446-Rev. B, 14-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED Avalanche Rugged Technology. Rugged Gate Oxide Technology. Lower Input Capacitance. Improved Gate Charge. Extended Safe Operating Area. Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel. MOSFET branches are mapped over wide
Part Number | IRFP150N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 42A TO-247AC |
Series | HEXFET |
Packaging | Bulk |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 23A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Image |
Hot Offer
IRFP150N
Vishay / BC Components
5000
2.65
Hongkong Truly Electronics Tech Co.,Ltd
IRFP150N
VISHAY GENERAL
1200
3.22
KINGFULL TECH CO., LIMITED
IRFP150N
Vishay Siliconix
600
3.79
HK FEILIDI ELECTRONIC CO., LIMITED
IRFP150N
Vishay Thin Film
91010
1.51
Cicotex Electronics (HK) Limited
IRFP150N
VISH
23447
2.08
Yingxinyuan INT'L (Group) Limited