(5/5) based on 5 customer reviews
Description
Datasheet IRFL9110 , SiHFL9110 www.vishay.com. Vishay Siliconix. S14-1686-Rev. F, 18- Aug-14. 1. Document Number: 91196. For technical questions, contact: Jan 28, 1999 IRFL9110 . HEXFET Power MOSFET. PD - 90864A. VDSS = -100V. RDS(on) = 1.2 . ID = -1.1A. Third Generation HEXFETs from International Document Number: 90410 www.vishay.com. Revision: 31-May-10. 1. R-C Thermal Model Parameters. IRFL9110_RC, SiHFL9110_RC. Vishay Siliconix. IRFL9110 . IR. 1200mA, 1.2m . 1. Q7. MJD32CT. Transistor, Power PNP, 100V, MJD32CT. ON Semi. 3A, 15W. 7. R1, R3,. 100k. Resistor, Chip, 1/16W, 1%. VCC12V_N. IRFL9110 . G. S. D. TAB. C. E. B. 3904. VCC5V. VCC12V_P. SCH P/ N. Sheet. Date: Title: Ver: A. B. C. D. 1. 2. 3. 4. D. C. B. A. 4. 3. 2. 1. Sheet Size: B.
| Part Number | IRFL9110 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET P-CH 100V 1.1A SOT223 |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 660mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
IRFL9110 MOS
Vishay Thin Film
8000
1.35
Ysx Tech Co., Limited
IRFL9110
VISH
220360
2.0825
Cinty Int'l (HK) Industry Co., Limited
IRFL9110
Vishay / BC Components
25000
2.815
Yingxinyuan INT'L (Group) Limited
IRFL9110
VISHAY GENERAL
23580
3.5475
N&S Electronic Co., Limited
IRFL9110, SiHFL9110
Vishay Siliconix
317000
4.28
N&S Electronic Co., Limited
