(4/5) based on 16 customer reviews
Description
IRFD014 , SiHFD014. Vishay Siliconix. FEATURES. Dynamic dV/dt Rating. For Automatic Insertion. End Stackable. 175 C Operating Temperature. IRFL014 OR IRFD014 . T1: CORE: 331X1853E2A A1=2600 (PHILIPS, OD=0.625 , Ae=0.153CM^2). PRIMARY: 17T, SEC.: 27T. Figure 24a. Improving the VGS (5 V/div, 50 ns/div). Figure 34. Drain-Source Voltage vs. Gate-Source Voltage, at Turn-on,. TPS2811 Driving an IRFD014 (Hex-1 Size) t Time. TA = 25 C. Q1. IRFD9014. Q3. IRFD9014. OUTPUT. +15V. -12V. OUTPUT. RTN. Q4. IRFD014 . Q2. IRFD014 . C1. 100nF. R1. 100. D1. 8.2V. D2. 15V. C2. 100nF. 1N4148.
| Part Number | IRFD014 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 60V 1.7A 4-DIP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Image |  |
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