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Description
DATASHEET IRFBG30 . SiHFBG30. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. ID @ TC = 100 C. (A). Qg Typ. Qgd Typ. Rth(JC). PD (W). @ TC = 25. C. IRFBG30 . 1000. 5000. 3.1. 2. 53.3. 28. 1. 125. IRFBG30PBF. 1000. 5000. 3.1. 2. 53.3. Jul 24, 2008 MOSFET SWITCHING TRANSISTOR 1000V. IR IRFBG30 . 1. Q100. 92. CURRENT LIMITER INRUSH. GE sensing CL-60. Digikey KC006L-ND.
Part Number | IRFBG30 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 1000V 3.1A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 980pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 1.9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image | ![]() |
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