Part Number | IRFBE30SPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 800V 4.1A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFBE30SPBF
Vishay Thin Film
8000
0.79
HK GRONICE ELECTRONIC TECHNOLOGY LIMITED
IRFBE30SPBF
VISH
9133
1.82
AoHoo Enterprise (HongKong) Co., Limited
IRFBE30SPBF
Vishay / BC Components
13026
2.85
N&S Electronic Co., Limited
IRFBE30SPBF
VISHAY GENERAL
2500
3.88
HK JIAYUAN ELECTRONICS LIMITED
IRFBE30SPBF
Vishay Siliconix
16660
4.91
LvangChip(HongKong)Co.,Limited