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Description
Datasheet Mar 21, 2011 SiHFBC40-E3. SnPb. IRFBC40 . SiHFBC40. ABSOLUTE MAXIMUM RATINGS ( TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. Document Number: 90431 www.vishay.com. Revision: 20-Apr-10. 1. R-C Thermal Model Parameters. IRFBC40_RC, SiHFBC40_RC. Vishay Siliconix. Rgate=33 , V C C =15V. Figure 22. IR2181 vs. Frequency (IRFBC 30),. R gate= 22 , V C C =15V. Figure 23. IR2181 vs. Frequency ( IRFBC 40 ),. Rgate=15 , V Sep 15, 2008 Uses IRFBC40 , SiHFBC40 data and test conditions. PRODUCT SUMMARY. VDS (V). 600. RDS(on) ( ). VGS = 10 V. 1.2. Qg (Max.) (nC). 60. Apr 29, 2013 Figure 22. IRS2186 vs. Frequency (IRFBC30). Rgate = 22 , VCC = 15V. Figure 23. IRS2186 vs. Frequency ( IRFBC40 ). Rgate = 15 , VCC =
| Part Number | IRFBC40 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 600V 6.2A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3.7A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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