Description
Jan 20, 2006 IRFSL3307. IRFB3307 . IRFS3307. IRFSL3307. HEXFET. . Power MOSFET. Applications l High Efficiency Synchronous Rectification in SMPS. Aug 19, 2011 Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V (Silicon Limited). ID @ TC
Part Number | IRFB3307 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 75V 130A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRFB3307
Vishay Thin Film
10000
1.87
Shenzhen Taochip Electronic Co.,Ltd
IRFB3307
VISH
1000
3.1125
MY Group (Asia) Limited
IRFB3307
Vishay / BC Components
6000
4.355
Shenzhen Qiangneng Electronics Co., Ltd.
IRFB3307
VISHAY GENERAL
30000
5.5975
Nosin (HK) Electronics Co.
IRFB3307
Vishay Siliconix
32000
6.84
Ande Electronics Co., Limited