Description
IRF9956 . Description. Recommended upgrade: IRF7303 or IRF7313. Lower profile/smaller equivalent: IRF7503. Symbol. Maximum. Units. Drain-Source Voltage. (IRF7380) and a secondary side gate clamp FET ( IRF9956 ). The front side and back side of the demo board are shown in Fig. 1. Fig. 1 Front side and back side two 30V secondary side FETs (IRF6618), a primary side biasing FET. (IRF7380 ) and a secondary side gate clamp FET ( IRF9956 ). The front side of the demo F-2. Part Number. Rds(on) Qg(max). Qg(max). ( ). nC improvement. IRF9410. Single 30V N Ch. 0.03. 27. 46%. Si9410. 0.03. 50. IRF9956 . Dual 30V N Ch. 0.1. Absolute Maximum Ratings. Parameter. Units. ID @ VGS = -10V, TC = 25 C Continuous Drain Current. -18. ID @ VGS = -10V, TC = 100 C Continuous Drain
Part Number | IRF9956 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Vishay |
Description | MOSFET 2N-CH 30V 3.5A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.5A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
IRF9956
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HK HEQING ELECTRONICS LIMITED
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