(4/5) based on 2 customer reviews
Description
IRF840LC , SiHF840LC. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; c. ISD 8.0 A, dI/dt 100 A/ s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRF840LC , SiHF840LC data and test conditions. PRODUCT SUMMARY. iRF840LC . RD vw. Ir. PihOWMSIps. Duly Fmm s 013. l L 110v. Fig 10a. Switching Time Test Circuit. C O U .n. E. i. BO. 00. Tc, Case Temperature ( 0). Fig 10b. Page 1. Document Number: 90280 www.vishay.com. Revision: 18-Mar-10. 1. R-C Thermal Model Parameters. IRF840LC_RC, SiHF840LC_RC. Feb 2, 2009 12). c. ISD 8.0 A, dI/dt 100 A/ s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRF840LC , SiHF840LC data and test conditions.
| Part Number | IRF840LC |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 500V 8A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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