Description
IRF840ALPbF . SiHF840AS-E3. SiHF840ASTL-E3a. SiHF840ASTR-E3a. SiHF840AL-E3. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). D2PAK (TO-263). I2PAK (TO-262). Lead (Pb)-free. IRF840ASPbF. IRF840ASTRLPbFa. IRF840ASTRRPbFa. IRF840ALPbF . SiHF840AS-E3. SiHF840ASTL-E3a. IRF840ALPBF . 500. 850. 8. 5.1. 25.3. 12. 1. 125. IRF840LCL. 500. 850. 8. 5.1. 26. 12.7. 1. 125. IRF840LCLPBF. 500. 850. 8. 5.1. 26. 12.7. 1. 125. IRF830AL. 500. IRF840ALPBF . 500. 850. 8. 5.1. 25.3. 12. 1. 125. IRF840LCLPBF. 500. 850. 8. 5.1 . 26. 12.7. 1. 125. IRFSL11N50APBF. 500. 550. 11. 7. 34. 15.3. 0.75. 190.
Part Number | IRF840ALPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 500V 8A TO-262 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1018pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF840ALPBF
Vishay Thin Film
2225
0.41
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF840ALPBF
VISH
54
1.665
FLOWER GROUP(HK)CO.,LTD
IRF840ALPBF
Vishay / BC Components
178
2.92
Gallop Great Holdings (Hong Kong) Limited
IRF840ALPBF
VISHAY GENERAL
2698
4.175
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF840ALPBF
Vishay Siliconix
35800
5.43
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED