Description
Aug 11, 2004 Parameter. Max. Units. VDS. Drain- Source Voltage. -20. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ -4.5V. -8.2. ID @ TA= 70 C.
Part Number | IRF7663TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET P-CH 20V 8.2A MICRO8 |
Series | HEXFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 2520pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro8 |
Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Image |
IRF7663TRPBF
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