(4/5) based on 7 customer reviews
Description
IRF644 , SiHF644 www.vishay.com. Vishay Siliconix. S16-0754-Rev. D, 02-May- 16. 1. Document Number: 91039. For technical questions, contact: hvm@vishay. IRF644 . SiHF644. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. Page 1. Document Number: 90253 www.vishay.com. Revision: 12-Mar-10. 1. R-C Thermal Model Parameters. IRF644_RC, SiHF644_RC. Vishay Siliconix. The IRF644 power MOSFETs used in this circuit are capable of handling up to 370W of redundant power across a 36V to 75V range. The IRF6662, 17.5mOhm Jul 25, 2015 High Endurance Non-volatile Memory segments. 64 Kbytes of In-System Self- programmable Flash program memory. 2 Kbytes EEPROM.
| Part Number | IRF644 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 250V 14A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 8.4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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