(5/5) based on 1 customer reviews
Description
DATASHEET IRF630 . SiHF630. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS. IRF630 . IRF630FP. N-channel 200V - 0.35 - 9A TO-220/TO-220FP. Mesh overlay II Power MOSFET. General features. Extremely high dv/dt capability. IRF230-233/ IRF630 -633. MTP12N18/12N20. N-Channel Power Mosfets. 12A, 150-200V www.artschip.com. 1. Description. These devices are n-channel, IRF630 N-Channel Power MOSFET. GENERAL DESCRIPTION. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate The HEXFET Power MOSFET used in all the examples is the IRF630 . The control settings given in the examples are those suitable for the IRF630 . The user must
| Part Number | IRF630 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Vishay |
| Description | MOSFET N-CH 200V 9A TO-220 |
| Series | MESH OVERLAY,II |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
IRF630
Vishay Thin Film
9000
0.17
Fairstock HK Limited
IRF630
VISH
20000
1.45
Xinye International Technology Limited
IRF630
Vishay / BC Components
180
2.73
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF630
VISHAY GENERAL
40000
4.01
Belt (HK) Electronics Co
IRF630(ST)
Vishay Siliconix
12850
5.29
CIS Ltd (CHECK IC SOLUTION LIMITED)
