Description
Datasheet Document Number: 91022 www.vishay.com. S11-1046-Rev. D, 30-May-11. 1. This document is subject to change without notice. THE PRODUCTS DESCRIBED IRF540N. HEXFET Power MOSFET. 03/13/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.15. R CS. Case-to-Sink, Flat, Greased Surface. Document Number: 91021 www.vishay.com. S11-0510-Rev. B, 21-Mar-11. 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED International. E Rectifier. PD-9.373H. |RF54O. HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 Repetitive Avalanche Rated. 0 175 C Operating NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &. IRF540 . N-CHANNEL 100V - 0.055 - 22A TO-220. LOW GATE CHARGE
Part Number | IRF540S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 100V 28A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
Rds On (Max) @ Id, Vgs | 77 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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