Description
CSD18509Q5B . SLPS476 JUNE 2014. CSD18509Q5B N-Channel NexFET Power MOSFETs. 1 Features. Product Summary. 1 Ultra-Low On Resistance. Jun 25, 2014 Samples. CSD18509Q5B . PREVIEW VSON-CLIP. DNK. 8. 2500. Pb-Free (RoHS. Exempt). CU NIPDAU. Level-1-260C-UNLIM. CSD18509. CSD18504Q5A. 40. 20. 1.9. 6.6. 9.8. . 50. 75. 275. 16. 3.2. 2.4. 0.50. CSD18509Q5B . 40. 20. 1.8. 1.2. 1.7. . 100. 299. 400. 150. 29. 17. 1.09. CSD18531Q5A. CSD18509Q5B . 40. 20. 1.9. 299. 1. 150. 17. 29. Single. SON5x6. 55 to 150. CSD18531Q5A. 60. 20. 1.8. 134. 3.5. 36. 5.9. 6.9. Single. SON5x6. 55 to 150.
Part Number | CSD18509Q5B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Vishay |
Description | MOSFET N-CH 40V 100A 8VSON |
Series | NexFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13900pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 195W (Tc) |
Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 32A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (5x6) |
Package / Case | 8-PowerTDFN |
Image |
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