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Description
DATASHEET and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER. MAXIMUM RATINGS: (TA=25 C). SYMBOL. 2N5114 2N5116 . GENERAL DESCRIPTION. Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and Drain-Source On State Voltage. VGS = 0 Vdc, ID = -15 mAdc. 2N5114. VGS = 0 Vdc, ID = -7.0 mAdc. 2N5115. VGS = 0 Vdc, ID = -3.0 mAdc. 2N5116 . VDS(on). Mar 10, 1997 2N5116 . J176. SST176. 1.78b. 4.7 M. 5 M. 20. 35. 14 P. 13 P. 1.1 P. 1.5. Notes: a. These parameters are only important when modeling the Surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. Low-profile ceramic surface mount package. Screening in reference to
| Part Number | 2N5116 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - JFETs |
| Brand | Vishay |
| Description | JFET P-CH 30V 0.5W TO18 |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1nA |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Resistance - RDS(On) | 150 Ohm |
| Power - Max | 500mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Image |  |
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