Description
GaAlAs Double Hetero. DESCRIPTION. TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and. 1IF=100 mA , 2IF=1 A, 3IF=250 mA. PART NUMBER. Angle of Half. Intensity. ( ). Intensity (mW/sr). Degradation. ( % ). 0 hours. 4000 hours. Vishay TSHG5210 . TSHG5210 . 850. 10. 230. 20. Stand-off. TSHG5410. 850. 18. 90. 20. Stand-off. TSHG5510. 830. 38. 32. 15. Stand-off. TSHG6200. 850. 10. 180. 20. No stand-off. TSHF5210. 3.7. 880 nm/360 mW/sr. TSHF5410. 2.1. 880 nm/135 mW/sr. TSHF6210. 2.1. 880 nm/360 mW/sr. TSHF6410. 2.1. 880 nm/135 mW/sr. TSHG5210 . 3.7. 180. 30. . tShF6410. 890. 22. 70. 30. . tShG5210 . 850. 10. 230. 20. . tShG5410. 850. 18. 90. 20. . tShG5510. 830.
Part Number | TSHG5210 |
Main Category | Optoelectronics |
Sub Category | Infrared, UV, Visible Emitters |
Brand | Vishay |
Description | EMITTER IR 850NM 100MA RADIAL |
Series | - |
Packaging | Bulk |
Type | Infrared (IR) |
Current - DC Forward (If) (Max) | 100mA |
Radiant Intensity (Ie) Min @ If | 140mW/sr @ 100mA |
Wavelength | 850nm |
Voltage - Forward (Vf) (Typ) | 1.5V |
Viewing Angle | 20° |
Orientation | Top View |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | Radial |
Image |
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